High-purity Ti-Al Target for producing 28 nano semiconductor chips

Ingredients

-. Ti : Al (at%) = 50at % : 50at % (Tolerance ± 1at %).

-. Ti : Al (wt%) = 64wt % : 36wt % (Tolerance ± 0.8wt %).

Purity

-. ≥ 4N5 (≥ 99.995%).

-. Inspection methods: GDMS (Glow Discharge Mass Spectrometry).

Other SPEC

-. Size: Φ454mm × 11.3Hmm (Tolerance: + 0.5mm).

-. Surface: CNC machining surface, no deformation, no pollution, no scratch.

-. Internal quality: Recrystallization ≥ 90%, average grain size ≤ 80 μm, uniform grain size, no layer, no stomatal, no inclusion, electrical conductivity > 3MS/M.

Characteristics / Advantages

-. Al does not decay when the target is in use (When the Al element is less than 49.7at%, the target will not be used).

-. The product uses the forging process and the porosity is 0%, Japanese product uses powder metallurgy process and have a porosity of 1%.

-. Oxygen content: ≤ 200ppm.

It broke through the hot working forging process of γ-TiAl which was difficult to form.

-. (a) Orthogonal Cube γ (TiAl).

-. (b) Close-Packed Hexagonal α2 (Ti3Al).